C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995
by
 
Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)

Title
C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995

Author
Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)

ISBN
9780444596338

Conference Author
Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)

Publication Information
Oxford : Elsevier Science, 1996.

Physical Description
1 online resource (580 p.)

Series
European Materials Research Society Symposia Proceedings

Series Title
European Materials Research Society Symposia Proceedings

Subject Term
Semiconductors -- Congresses.
 
Silicon -- Congresses.
 
Semiconductors -- Defects -- Congresses.
 
Compound semiconductors.
 
Compound semiconductors -- Congresses.
 
Compound semiconductors -- Industrial applications -- Congresses.
 
Congreses.
 
Congresses.
 
Mathematical models.
 
Nanostructure materials.
 
Semiconductors -- Design and construction -- Congresses.
 
Semiconductors -- Mathematical models -- Congresses.
 
Semiconductors -- Simulation methods -- Congresses.
 
Silicon crystals.

Added Author
Borghesi, A.

Added Conference Author
Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes (1995 : Strasbourg, France)

Electronic Access
ScienceDirect http://www.sciencedirect.com/science/book/9780444824134


LibraryMaterial TypeItem BarcodeShelf Number[[missing key: search.ChildField.HOLDING]]Status
Online LibraryE-Book256212-1001ONLINEElektronik Kütüphane