C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995
by
Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)
Title
:
C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995
Author
:
Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)
ISBN
:
9780444596338
Conference Author
:
Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)
Publication Information
:
Oxford : Elsevier Science, 1996.
Physical Description
:
1 online resource (580 p.)
Series
:
European Materials Research Society Symposia Proceedings
Series Title
:
European Materials Research Society Symposia Proceedings
Subject Term
:
Semiconductors -- Congresses.
Silicon -- Congresses.
Semiconductors -- Defects -- Congresses.
Compound semiconductors.
Compound semiconductors -- Congresses.
Compound semiconductors -- Industrial applications -- Congresses.
Congreses.
Congresses.
Mathematical models.
Nanostructure materials.
Semiconductors -- Design and construction -- Congresses.
Semiconductors -- Mathematical models -- Congresses.
Semiconductors -- Simulation methods -- Congresses.
Silicon crystals.
Added Author
:
Borghesi, A.
Added Conference Author
:
Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes (1995 : Strasbourg, France)
Electronic Access
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Library | Material Type | Item Barcode | Shelf Number | [[missing key: search.ChildField.HOLDING]] | Status |
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Online Library | E-Book | 256212-1001 | ONLINE | | Elektronik Kütüphane |