Strain-engineered MOSFETs
by
Maiti, C. K.
Title
:
Strain-engineered MOSFETs
Author
:
Maiti, C. K.
ISBN
:
9781466503472
Publication Information
:
Boca Raton, Fla. : CRC Press, 2013.
Physical Description
:
xix, 300 p. : ill.
Contents
:
1. Introduction -- 2. Substrate-induced strain engineering in CMOS technology -- 3. Process-induced stress engineering in CMOS technology -- 4. Electronic properties of strain-engineered semiconductors -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7. Technology CAD of strain-engineered MOSFETs -- 8. Reliability and degradation of strain-engineered MOSFETs -- 9. Process compact modelling of strain-engineered MOSFETs -- 10. Process-aware design of strain-engineered MOSFETs -- 11. Conclusions.
Abstract
:
"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"-- Provided by publisher.
Subject Term
:
Metal oxide semiconductor field-effect transistors -- Reliability.
Integrated circuits -- Fault tolerance.
Strains and stresses.
Added Author
:
Maiti, T. K.
Electronic Access
:
Library | Material Type | Item Barcode | Shelf Number | [[missing key: search.ChildField.HOLDING]] | Status |
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Online Library | E-Book | 288147-1001 | ONLINE | | Elektronik Kütüphane |