Wide bandgap semiconductors for power electronics
by
 
Wellmann, Peter, editor.

Title
Wide bandgap semiconductors for power electronics

Author
Wellmann, Peter, editor.

ISBN
9783527824724

Physical Description
1 online resource (2 volumes)

General Note
Includes index.

Contents
Volume 1. Part 1. Silicon carbide -- Volume 2. Part II. Gallium Nitride (GaN), diamond and Ga2O3.

Abstract
Wide Bandgap Semiconductors for Power Electronics is a guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers.

Local Note
John Wiley and Sons

Subject Term
Wide gap semiconductors.
 
Power electronics.
 
Semi-conducteurs à large bande interdite.
 
Électronique de puissance.
 
Power electronics
 
Wide gap semiconductors

Added Author
Wellmann, Peter,
 
Ohtani, Noboru,
 
Rupp, R. (Roland),

Electronic Access
https://onlinelibrary.wiley.com/doi/book/10.1002/9783527824724


LibraryMaterial TypeItem BarcodeShelf Number[[missing key: search.ChildField.HOLDING]]Status
Online LibraryE-Book597144-1001QC611.8 .W53Wiley E-Kitap Koleksiyonu