Technology computer aided design simulation for VLSI MOSFET

Title:

Author:

Sarkar, Chandan Kumar, editor of compilation.

ISBN:

9781466512665

Publication Information:

Boca Raton : Taylor & Francis, 2013.

Physical Description:

xv, 430 p. : ill.

Contents:

1. Introduction to technology computer aided design / Samar K. Saha -- 2. Basic semiconductor and Metal-Oxide-Semiconductor (MOS) physics / Swapnadip De -- 3. Review of numerical methods for Technology Computer Aided Design (TCAD) / Kalyan Koley -- 4. Device simulation using ISE-TCAD / N. Mohankumar -- 5. Device simulation using silvaco ATLAS tool / Angsuman Sarkar -- 6. Study of deep sub-micron VLSI MOSFETs through TCAD / Srabanti Pandit -- 7. MOSFET characterization for VLSI circuit simulation / Soumya Pandit -- 8. Process simulation of a MOSFET using TSUPREM-4 and medici / Atanu Kundu.

Abstract:

"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"-- Provided by publisher.

Subject Term:

Integrated circuits -- Very large scale integration -- Computer-aided design.

Metal oxide semiconductor field-effect transistors -- Computer-aided design.

Added Author:

Sarkar, Chandan Kumar,

Electronic Access:

Distributed by publisher. Purchase or institutional license may be required for access.

Holds:
Copies:

Available:*

Library	Material Type	Item Barcode	Shelf Number	Status	Item Holds
Searching... Online Library	E-Book	290952-1001	ONLINE	Searching... Unknown	Searching... Unavailable

Available:*

On Order