
Title:
Wide bandgap semiconductors for power electronics
Author:
Wellmann, Peter, editor.
ISBN:
9783527824724
Physical Description:
1 online resource (2 volumes)
General Note:
Includes index.
Contents:
Volume 1. Part 1. Silicon carbide -- Volume 2. Part II. Gallium Nitride (GaN), diamond and Ga2O3.
Abstract:
Wide Bandgap Semiconductors for Power Electronics is a guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers.
Local Note:
John Wiley and Sons
Electronic Access:
https://onlinelibrary.wiley.com/doi/book/10.1002/9783527824724Copies:
Available:*
Library | Material Type | Item Barcode | Shelf Number | Status | Item Holds |
|---|---|---|---|---|---|
Searching... | E-Book | 597144-1001 | QC611.8 .W53 | Searching... | Searching... |
