Cover image for Graphene for post-Moore silicon optoelectronics
Title:
Graphene for post-Moore silicon optoelectronics
Author:
Xu, Yang, author.
ISBN:
9783527841011

9783527840991

9783527841004
Physical Description:
1 online resource
Contents:
Cover -- Title Page -- Copyright Page -- Contents -- Preface -- Acknowledgments -- Biography -- Chapter 1 Graphene for Silicon Optoelectronics -- 1.1 Introduction -- 1.2 Optical Absorption -- 1.3 Emergence of Graphene in Silicon Optoelectronics -- 1.4 Photodetection in Graphene -- 1.4.1 Performance Metrics -- 1.4.2 Photovoltaic Effect -- 1.4.3 Photoemission in Graphene Schottky Junctions -- 1.4.4 Thermionic Emission in Graphene-based Interfaces -- 1.4.5 Hot Electron-based Photodetection -- 1.4.5.1 Photothermoelectric Effect (PTE) -- 1.4.5.2 Photobolometric Effect (PBE)

1.4.5.3 Photothermionic (PTI) Effect -- 1.4.5.4 Photogating Effect -- 1.4.6 Infrared Modulators -- 1.4.7 Photovoltaic Devices -- 1.5 Outlook -- References -- Chapter 2 Growth and Transfer of Graphene for Silicon Optoelectronics -- 2.1 Introduction -- 2.2 Growth of Graphene -- 2.2.1 Growth Dynamics of CVD Gr and Choice of Substrate -- 2.2.2 Growth on Metallic Substrates -- 2.2.3 Direct Growth on Dielectric Substrates -- 2.2.4 Direct Growth on Semiconductor Substrates -- 2.2.5 Large-scale CVD Growth of Graphene -- 2.3 Dielectric Deposition on Graphene -- 2.4 Graphene Transfer Methods

2.5 Fabrication of Solution-processed Graphene and Integration with Silicon -- 2.6 Graphene Transfer on Flexible Silicon -- 2.7 Graphene Integration with Silicon in CMOS Process -- 2.8 Challenges and Future Prospectives -- References -- Chapter 3 Physics of Graphene/Silicon Junctions -- 3.1 Introduction -- 3.2 Physics of Schottky Junction -- 3.3 Measurement of Schottky Barrier Height -- 3.3.1 Capacitance Voltage Measurement -- 3.3.2 Current-Voltage Measurement -- 3.3.3 Photoelectric Measurement -- 3.3.4 Thermionic Emission Measurements -- 3.4 2D Materials and Schottky Junctions

3.5 Challenges and Future Prospective -- References -- Chapter 4 Graphene/Silicon Junction for High-performance Photodetectors -- 4.1 Introduction -- 4.2 Ultraviolet Photodetectors -- 4.3 Visible to Near-infrared Photodetector -- 4.4 Broadband Photodetectors -- 4.5 Hybrid Gr/Si Photodetectors -- 4.6 Challenges and Perspectives -- References -- Chapter 5 Graphene/Silicon Solar Energy Harvesting Devices -- 5.1 Introduction -- 5.2 Photovoltaic Mechanism and Performance Parameters of Graphene/Silicon Solar Cells -- 5.3 Theoretical Efficiency Limits of Graphene Silicon Solar Cells

5.4 Optimization of Graphene/Silicon Solar Cells -- 5.4.1 Doping of Graphene -- 5.4.2 Light Trapping in Silicon -- 5.4.3 Antireflection Coating -- 5.4.4 Interface Engineering -- 5.4.5 Surface Passivation -- 5.5 Challenges and Perspectives -- References -- Chapter 6 Graphene Silicon-integrated Waveguide Devices -- 6.1 Introduction -- 6.2 Hybrid Waveguide Photodetector -- 6.3 Hybrid Waveguide Modulator -- 6.3.1 Electro-optical Modulator -- 6.3.2 Thermo-optic Modulator -- 6.4 Challenges and Prospectives -- References -- Chapter 7 Graphene for Silicon Image Sensor -- 7.1 Introduction
Abstract:
Graphene for Post-Moore Silicon Optoelectronics Provides timely coverage of an important research area that is highly relevant to advanced detection and control technology Projecting device performance beyond the scaling limits of Moore’s law requires technologies based on novel materials and device architecture. Due to its excellent electronic, thermal, and optical properties, graphene has emerged as a scalable, low-cost material with enormous integration possibilities for numerous optoelectronic applications. Graphene for Post-Moore Silicon Optoelectronics presents an up-to-date overview of the fundamentals, applications, challenges, and opportunities of integrating graphene and other 2D materials with silicon (Si) technologies. With an emphasis on graphene-silicon (Gr/Si) integrated devices in optoelectronics, this valuable resource also addresses emerging applications such as optoelectronic synaptic devices, optical modulators, and infrared image sensors. The book opens with an introduction to graphene for silicon optoelectronics, followed by chapters describing the growth, transfer, and physics of graphene/silicon junctions. Subsequent chapters each focus on a particular Gr/Si application, including high-performance photodetectors, solar energy harvesting devices, and hybrid waveguide devices. The book concludes by offering perspectives on the future challenges and prospects of Gr/Si optoelectronics, including the emergence of wafer-scale systems and neuromorphic optoelectronics. Illustrates the benefits of graphene-based electronics and hybrid device architectures that incorporate existing Si technology Covers all essential aspects of Gr/Si devices, including material synthesis, device fabrication, system integration, and related physics Summarizes current progress and future challenges of wafer-scale 2D-Si integrated optoelectronic devices Explores a wide range of Gr/Si devices, such as synaptic phototransistors, hybrid waveguide modulators, and graphene thermopile image sensors Graphene for Post-Moore Silicon Optoelectronics is essential reading for materials scientists, electronics engineers, and chemists in both academia and industry working with the next generation of Gr/Si devices.
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John Wiley and Sons
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