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Cover image for C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995
Title:
C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995
Author:
Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)
ISBN:
9780444596338
Conference Author:
Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)
Publication Information:
Oxford : Elsevier Science, 1996.
Physical Description:
1 online resource (580 p.)
Series:
European Materials Research Society Symposia Proceedings
Series Title:
European Materials Research Society Symposia Proceedings
Subject Term:
Semiconductors -- Congresses.

Silicon -- Congresses.

Semiconductors -- Defects -- Congresses.

Compound semiconductors.

Compound semiconductors -- Congresses.

Compound semiconductors -- Industrial applications -- Congresses.

Congreses.

Congresses.

Mathematical models.

Nanostructure materials.

Semiconductors -- Design and construction -- Congresses.

Semiconductors -- Mathematical models -- Congresses.

Semiconductors -- Simulation methods -- Congresses.

Silicon crystals.
Added Author:
Borghesi, A.
Added Conference Author:
Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes (1995 : Strasbourg, France)
Electronic Access:
ScienceDirect http://www.sciencedirect.com/science/book/9780444824134
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