C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995
tarafından
Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)
Başlık
:
C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995
Yazar
:
Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)
ISBN
:
9780444596338
Toplantı Adı Girişi
:
Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)
Yayın Bilgileri
:
Oxford : Elsevier Science, 1996.
Fiziksel Tanımlama
:
1 online resource (580 p.)
Seri
:
European Materials Research Society Symposia Proceedings
Seri Başlığı
:
European Materials Research Society Symposia Proceedings
Konu Terimleri
:
Semiconductors -- Congresses.
Silicon -- Congresses.
Semiconductors -- Defects -- Congresses.
Compound semiconductors.
Compound semiconductors -- Congresses.
Compound semiconductors -- Industrial applications -- Congresses.
Congreses.
Congresses.
Mathematical models.
Nanostructure materials.
Semiconductors -- Design and construction -- Congresses.
Semiconductors -- Mathematical models -- Congresses.
Semiconductors -- Simulation methods -- Congresses.
Silicon crystals.
Yazar Ek Girişi
:
Borghesi, A.
Toplantı Adı Ek Girişi
:
Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes (1995 : Strasbourg, France)
Elektronik Erişim
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