chapter 1 Defects in Ultra-Shallow Junctions / chapter 2 Hydrogen-Related Defects in Silicon, Germanium, and Silicon–Germanium Alloys / chapter 3 Defects in Strained-Si MOSFETs / chapter 4 The Effect of Defects on Electron Transport in Nanometer-Scale Electronic Devices: Impurities and Interface Roughness / chapter 5 Electrical Characterization of Defects in Gate Dielectrics / chapter 6 Dominating Defects in the MOS System: Pb and E0 Centers / chapter 7 Oxide Traps, Border Traps, and Interface Traps in SiO2 / chapter 8 From 3D Imaging of Atoms to Macroscopic Device Properties / chapter 9 Defect Energy Levels in HfO2 and Related High-K Gate Oxides / chapter 10 Spectroscopic Studies of Electrically Active Defects in High-K Gate Dielectrics / chapter 11 Defects in CMOS Gate Dielectrics / chapter 12 Negative Bias Temperature Instabilites in High-k Gate Dielectrics -- chapter 13 Defect Formation and Annihilation in Electronic Devices and the Role of Hydrogen / chapter 14 Toward Engineering Modeling of Negative Bias Temperature Instability / chapter 15 Wear-Out and Time-Dependent Dielectric Breakdown in Silicon Oxides / chapter 16 Defects Associated with Dielectric Breakdown in SiO2-Based Gate Dielectrics / chapter 17 Defects in Thin and Ultrathin Silicon Dioxides / chapter 18 Structural Defects in SiO2–Si Caused by Ion Bombardment / chapter 19 Impact of Radiation-Induced Defects on Bipolar Device Operation / chapter 20 Silicon Dioxide–Silicon Carbide Interfaces: Current Status and Recent Advances / chapter 21 Defects in SiC / chapter 22 Defects in Gallium Arsenide