SiGe and Si strained-layer epitaxy for silicon heterostructure devices
tarafından
Cressler, John D.
Başlık
:
SiGe and Si strained-layer epitaxy for silicon heterostructure devices
Yazar
:
Cressler, John D.
ISBN
:
9781315218908
9781351826105
9781420066869
Fiziksel Tanımlama
:
1 online resource (264 pages)
Genel Not
:
The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005--T.p. verso.
İçerik
:
chapter 1 The Big Picture -- chapter 2 A Brief History of the Field -- chapter 3 Overview: SiGe and Si Strained-Layer Epitaxy -- chapter 4 Strained SiGe and Si Epitaxy -- chapter 5 Si-SiGe(C) Epitaxy by RTCVD -- chapter 6 MBE Growth Techniques -- chapter 7 UHV/CVD Growth Techniques -- chapter 8 Defects and Diffusion in SiGe and Strained Si -- chapter 9 Stability Constraints in SiGe Epitaxy -- chapter 10 Electronic Properties of Strained Si/SiGe and Si1-yCy Alloys -- chapter 11 Carbon Doping of SiGe -- chapter 12 Contact Metallization on Silicon�Germanium -- chapter 13 Selective Etching Techniques for SiGe/Si.
Konu Terimleri
:
Bipolar transistors -- Materials.
Silicon -- Electric properties.
Heterostructures.
Epitaxy.
Yazar Ek Girişi
:
Cressler, John D.
Tek Biçim Eser Adı
:
Silicon heterostructure handbook.
Elektronik Erişim
:
| Kütüphane | Materyal Türü | Demirbaş Numarası | Yer Numarası | [[missing key: search.ChildField.HOLDING]] | Durumu/İade Tarihi |
|---|
| Çevrimiçi Kütüphane | E-Kitap | 543480-1001 | TK7871.96 .B55 S53 2008 | | CRC E-Books |