chapter 1 Silicon Semiconductor Metrology / chapter 2 Gate Dielectric Metrology KLA-Tencor Corporation, San Jose, California -- chapter 3 Metrology for Ion Implantation / chapter 4 MOS Device Characterization / chapter 5 Carrier Illumination Characterization of Ultra-Shallow Implants / chapter 6 Modeling of Statistical Manufacturing Sensitivity and of Process Control and Metrology Requirements for a 0.18-�m NMOSFET / chapter 7 Overview of Metrology for On-Chip Interconnect / chapter 8 Metrology for On-Chip Interconnect Dielectrics / chapter 9 Thin-Film Metrology Using Impulsive Stimulated Thermal Scattering (ISTS) / chapter 10 Metal Interconnect Process Control Using Picosecond Ultrasonics / chapter 11 Sheet Resistance Measurements of Interconnect Films / chapter 12 Characterization of Low-Dielectric Constant Materials / chapter 13 High-Resolution Profilometry for CMP and Etch Metrology / chapter 14 Critical-Dimension Metrology and the Scanning Electron Microscope / chapter 15 Scanned Probe Microscope Dimensional Metrology / chapter 16 Electrical CD Metrology and Related Reference Materials / chapter 17 Metrology of Image Placement / chapter 18 Scatterometry for Semiconductor Metrology / chapter 19 Unpatterned Wafer Defect Detection / chapter 20 Particle and Defect Characterization / chapter 21 Calibration of Particle Detection Systems / chapter 22 In Situ Metrology / chapter 23 Metrology Data Management and Information Systems / chapter 24 Statistical Metrology, with Applications to Interconnect and Yield Modeling / chapter 25 Physics of Optical Metrology of Silicon-Based Semiconductor Devices / chapter 26 Ultraviolet, Vacuum Ultraviolet, and Extreme Ultraviolet Spectroscopic Reflectometry and Ellipsometry / chapter 27 Analysis of Thin-Layer Structures by X-Ray Reflectometry / chapter 28 Ion Beam Methods / chapter 29 Electron Microscopy-Based Measurement of Feature Thickness and Calibration of Reference Materials -- chapter 30 Status of Lithography Metrology as of the End of 2000.