SiGe and Si strained-layer epitaxy for silicon heterostructure devices

Başlık:

Yazar:

Cressler, John D.

ISBN:

9781315218908

9781351826105

9781420066869

Fiziksel Tanımlama:

1 online resource (264 pages)

Genel Not:

The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005--T.p. verso.

İçerik:

chapter 1 The Big Picture -- chapter 2 A Brief History of the Field -- chapter 3 Overview: SiGe and Si Strained-Layer Epitaxy -- chapter 4 Strained SiGe and Si Epitaxy -- chapter 5 Si-SiGe(C) Epitaxy by RTCVD -- chapter 6 MBE Growth Techniques -- chapter 7 UHV/CVD Growth Techniques -- chapter 8 Defects and Diffusion in SiGe and Strained Si -- chapter 9 Stability Constraints in SiGe Epitaxy -- chapter 10 Electronic Properties of Strained Si/SiGe and Si1-yCy Alloys -- chapter 11 Carbon Doping of SiGe -- chapter 12 Contact Metallization on Silicon�Germanium -- chapter 13 Selective Etching Techniques for SiGe/Si.

Konu Terimleri:

Bipolar transistors -- Materials.

Silicon -- Electric properties.

Heterostructures.

Epitaxy.

Yazar Ek Girişi:

Cressler, John D.

Tek Biçim Eser Adı:

Silicon heterostructure handbook.

Elektronik Erişim:

Click here to view.

Ayırtma:
Kopya:

Rafta:*

Kütüphane	Materyal Türü	Demirbaş Numarası	Yer Numarası	Durumu/İade Tarihi	Materyal Ayırtma
Arıyor... Çevrimiçi Kütüphane	E-Kitap	543480-1001	TK7871.96 .B55 S53 2008	Arıyor... Unknown	Arıyor... Rafta

Rafta:*

On Order