1. Defects in ultra-shallow junctions / Mark E. Law ... [et al.] -- 2. Hydrogen-related defects in silicon, germanium, and silicon-germanium alloys / A.R. Peaker, V.P. Markevich, and L. Dobaczewski -- 3. Defects in strained-Si MOSFETs / Yongke Sun and Scott E. Thompson -- 4. The effect of defects on electron transport in nanometer-scale electronic devices : impurities and interface roughness / M.V. Fischetti and S. Jin -- 5. Electrical characterization of defects in gate dielectrics / Dieter K. Schroder -- 6. Dominating defects in the MOS system : Pb and E' centers / Patrick M. Lenahan -- 7. Oxide traps, border traps, and interface traps in SiO[subscript 2] / Daniel M. Fleetwood, Sokrates T. Pantelides, and Ronald D. Schrimpf -- 8. From 3D imaging of atoms to macroscopic device properties / S.J. Pennycook ... [et al.] -- 9. Defect energy levels in HfO2 and related high-K gate oxides / J. Robertson, K. Xiong, and K. Tse -- 10. Spectroscopic studies of electrically active defects in high-K gate dielectrics / Gerald Lucovsky --

11. Defects in CMOS gate dielectrics / Eric Garfunkel, Jacob Gavartin, and Gennadi Bersuker -- 12. Negative bias temperature instabilities in high-K gate dielectrics / M. Houssa ... [et al.] -- 13. Defect formation and annihilation in electronic devices and the role of hydrogen / Leonidas Tsetseris ... [et al.] -- 14. Toward engineering modeling of negative bias temperature instability / Tibor Grasser, Wolfgang Goes, and Ben Kaczer -- 15. Wear-out and time-dependent dielectric breakdown in silicon oxides / John S. Suehle -- 16. Defects associated with dielectric breakdown in SiO2-based gate dielectrics / Jordi Su ̨̌and Ernest Y. Wu -- 17. Defects in thin and ultrathin silicon dioxides / Giorgio Cellere, Simone Gerardin, and Alessandro Paccagnella -- 18. Structural defects in SiO2-Si caused by ion bombardment / Antoine D. Touboul ... [et al.] -- 19. Impact of radiation-induced defects on bipolar device operation / Ronald D. Schrimpf ... [et al.] -- 20. Silicon dioxide-silicon carbide interfaces : current status and recent advances / S. Dhar ... [et al.] -- 21. Defects in SiC / E. Janzň -- 22. Defects in gallium arsenide / J.C. Bourgoin and H.J. von Bardeleben.