C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995

Başlık:

Yazar:

Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)

ISBN:

9780444596338

Toplantı Adı Girişi:

Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)

Yayın Bilgileri:

Oxford : Elsevier Science, 1996.

Fiziksel Tanımlama:

1 online resource (580 p.)

Seri:

European Materials Research Society Symposia Proceedings

Seri Başlığı:

European Materials Research Society Symposia Proceedings

Konu Terimleri:

Semiconductors -- Congresses.

Silicon -- Congresses.

Semiconductors -- Defects -- Congresses.

Compound semiconductors.

Compound semiconductors -- Congresses.

Compound semiconductors -- Industrial applications -- Congresses.

Congreses.

Congresses.

Mathematical models.

Nanostructure materials.

Semiconductors -- Design and construction -- Congresses.

Semiconductors -- Mathematical models -- Congresses.

Semiconductors -- Simulation methods -- Congresses.

Silicon crystals.

Yazar Ek Girişi:

Borghesi, A.

Toplantı Adı Ek Girişi:

Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes (1995 : Strasbourg, France)

Elektronik Erişim:

ScienceDirect http://www.sciencedirect.com/science/book/9780444824134

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