Başlık:
Technology computer aided design simulation for VLSI MOSFET
Yazar:
Sarkar, Chandan Kumar, editor of compilation.
ISBN:
9781466512665
Yayın Bilgileri:
Boca Raton : Taylor & Francis, 2013.
Fiziksel Tanımlama:
xv, 430 p. : ill.
İçerik:
1. Introduction to technology computer aided design / Samar K. Saha -- 2. Basic semiconductor and Metal-Oxide-Semiconductor (MOS) physics / Swapnadip De -- 3. Review of numerical methods for Technology Computer Aided Design (TCAD) / Kalyan Koley -- 4. Device simulation using ISE-TCAD / N. Mohankumar -- 5. Device simulation using silvaco ATLAS tool / Angsuman Sarkar -- 6. Study of deep sub-micron VLSI MOSFETs through TCAD / Srabanti Pandit -- 7. MOSFET characterization for VLSI circuit simulation / Soumya Pandit -- 8. Process simulation of a MOSFET using TSUPREM-4 and medici / Atanu Kundu.
Özet:
"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"-- Provided by publisher.
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Kütüphane | Materyal Türü | Demirbaş Numarası | Yer Numarası | Durumu/İade Tarihi | Materyal Ayırtma |
|---|---|---|---|---|---|
Arıyor... | E-Kitap | 290952-1001 | ONLINE | Arıyor... | Arıyor... |