Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to Displays için kapak resmi
Başlık:
Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to Displays
Yazar:
Yamazaki, Shunpei, editor.
ISBN:
9781119247395

9781119247487
Basım Bilgisi:
1st
Fiziksel Tanımlama:
1 online resource (432 pages)
İçerik:
Intro -- Title Page -- Copyright Page -- Contents -- About the Editors -- List of Contributors -- Series Editor's Foreword -- Preface -- Acknowledgments -- Chapter 1 Introduction -- 1.1 History of Displays -- 1.2 Requirement for Displays -- 1.3 Transistor Technology for Displays -- 1.3.1 Comparison of Silicon and Oxide Semiconductors -- 1.3.2 FETs in LCDs -- 1.3.3 FETs in OLED Displays -- 1.3.4 Recent FET Technologies -- 1.3.5 Development of OLED Displays -- References -- Chapter 2 Applications of CAAC-IGZO FETs to Displays -- 2.1 Introduction -- 2.2 Bottom-Gate Top-Contact FET -- 2.2.1 Manufacturing Process for CAAC-IGZO FETs with C.E.-Type BGTC Structure -- 2.2.2 GI Formation -- 2.2.3 Formation of Buried Channel by Stacked Active Layer -- 2.2.4 Baking Treatment of CAAC-IGZO -- 2.2.5 Damaged Layer (n-Type) Formed by Deposition of S/D Electrodes -- 2.2.6 Cleaning of the Back Channel -- 2.2.7 Copper Wiring for S/D Electrodes -- 2.3 Top-Gate Self-Aligned FET -- 2.3.1 Fabrication Process of TGSA CAAC-IGZO FETs -- 2.3.2 Formation of GE/GI Patterns -- 2.3.3 Formation of S/D Regions -- 2.3.4 GI Thinning and L Reduction -- 2.4 Characteristics of CAAC-IGZO FET -- 2.4.1 Current Drivability -- 2.4.2 Low Off-State Current -- 2.4.3 Normally-Off Id-Vg Characteristics and Small Threshold-Voltage Variation -- 2.4.4 Saturability of Id-Vd Characteristics -- 2.4.5 Summary -- 2.5 Density of States and Device Reliability -- 2.5.1 Introduction -- 2.5.2 Measurement of Defect States in IGZO Film -- 2.5.3 Correlation between Oxygen Vacancies and FET Characteristics -- 2.5.4 Defect States in Silicon-Oxide Film -- 2.5.5 NBITS Mechanism -- 2.5.6 Summary -- 2.6 Oxide Conductor Electrode Process -- 2.6.1 Introduction -- 2.6.2 Method of Fabricating Oxide Conductor Electrode and Measurements of its Resistivity -- 2.6.3 LCD Device with Oxide Conductor Electrode -- 2.6.4 Summary.

6.2 Technology for Higher Resolution -- 6.2.1 Introduction -- 6.2.2 The Pixel Circuit -- 6.2.3 Pixel Layout and Aperture Ratio of an LCD -- 6.2.4 Applicability of Large-Sized Displays -- 6.3 Driving Method for Power Saving -- 6.3.1 Introduction -- 6.3.2 Saving Power with Low-Frequency Driving -- 6.3.3 Low-Frequency Driving with CAAC-IGZO -- 6.3.4 Configuration of a Liquid Crystal Cell for Low-Frequency Driving -- 6.3.5 Conclusions -- 6.4 Characteristics of LCDs -- 6.4.1 Introduction -- 6.4.2 High-Resolution Fringe-Field Switching LCDs -- 6.4.3 A 434-PPI Reflective LCD -- References -- Appendix -- Unit Prefixes -- Index -- Supplemental Images -- EULA.
Özet:
This book highlights the display applications of c-axis aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO), a new class of oxide material that challenges the dominance of silicon in the field of thin film semiconductor devices. It is an enabler for displays with high resolution and low power consumption, as well as high-productivity manufacturing. The applications of CAAC-IGZO focus on liquid crystal displays (LCDs) with extremely low power consumption for mobile applications, and high-resolution and flexible organic light-emitting diode (OLED) displays, and present a large number of prototypes developed at the Semiconductor Energy Laboratory. In particular, the description of LCDs includes how CAAC-IGZO enables LCDs with extremely low refresh rate that provides ultra-low power consumption in a wide range of use cases. Moreover, this book also offers the latest data of IGZO. The IGZO has recently achieved a mobility of 65.5 cm2#x83;}V-s, and it is expected to potentially exceed 100 cm2#x83;}V-s as high as that of LTPS. A further two books in the series will describe the fundamentals of CAAC-IGZO, and the application to LSI devices. Key features: • Introduces different oxide semiconductor field-effect transistor designs and their impact on the reliability and performance of LCDs and OLED displays, both in pixel and panel-integrated driving circuits. • Reviews fundamentals and presents device architectures for high-performance and flexible OLED displays, their circuit designs, and oxide semiconductors as an enabling technology. • Explains how oxide semiconductor thin-film transistors drastically can improve resolution and lower power consumption of LCDs.
Notlar:
John Wiley and Sons
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