Başlık:
Single-atom nanoelectronics
Yazar:
Prati, Enrico.
ISBN:
9789814316699
Yayın Bilgileri:
Singapore : Pan Stanford Pub. Pte. Ltd., 2013.
Fiziksel Tanımlama:
xii, 352 p. : ill.
İçerik:
1. Introduction / Asen Asenov -- 2. Quantum information in silicon devices based on individual dopants / Enrico Prati and Andrea Morello -- 3. Theory and simulations of controlled electronic states bound to a single dopant in silicon / Rajib Rahman, Lloyd C. L. Hollenberg, and Gerhard Klimeck -- 4. Using scanning tunneling microscopy to realize atomic-scale silicon devices / Martin Fuechsle and Michelle Y. Simmons -- 5. Deterministic single-ion implantation method for extending CMOS technologies / Takahiro Shinada -- 6. Single-ion implantation for quantum computing / David N. Jamieson -- 7. Single atom imaging-dopant atoms in silicon-based semiconductor devices-by atom probe tomography / Koji Inoue and Yasuyoshi Nagai -- 8. Low-noise current measurements on quantum devices operating at cryogenic temperature / Filippo Guagliardo and Giorgio Ferrari -- 9. Orbital structure and transport characteristics of single donors / Jan Verduijn, Giuseppe C. Tettamanzi, and Sven Rogge -- 10. Single-donor transport spectroscopy in ultimate silicon transistors / Marc Sanquer and Xavier Jehl -- 11. A spin quantum bit architecture with coupled donors and quantum dots in silicon / Thomas Schenkel, Cheuk Chi Lo, Christoph D. Weis, Jeffrey Bokor, Alexei M. Tyryshkin, and Stephen A. Lyon -- 12. Single spins in diamond : novel quantum devices and atomic sensors / Fedor Jelezko -- 13. Silicon-based single-dopant devices and integration with photons / Michiharu Tabe, Daniel Moraru, and Arief Udhiarto -- 14. Circuits with single-atom devices / Jan A. Mol and Sven Rogge.
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