C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 için kapak resmi
Başlık:
C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995
Yazar:
Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)
ISBN:
9780444596338
Toplantı Adı Girişi:
Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors (1995 : Strasbourg, France)
Yayın Bilgileri:
Oxford : Elsevier Science, 1996.
Fiziksel Tanımlama:
1 online resource (580 p.)
Seri:
European Materials Research Society Symposia Proceedings
Seri Başlığı:
European Materials Research Society Symposia Proceedings
Konu Terimleri:
Semiconductors -- Congresses.

Silicon -- Congresses.

Semiconductors -- Defects -- Congresses.

Compound semiconductors.

Compound semiconductors -- Congresses.

Compound semiconductors -- Industrial applications -- Congresses.

Congreses.

Congresses.

Mathematical models.

Nanostructure materials.

Semiconductors -- Design and construction -- Congresses.

Semiconductors -- Mathematical models -- Congresses.

Semiconductors -- Simulation methods -- Congresses.

Silicon crystals.
Yazar Ek Girişi:
Borghesi, A.
Toplantı Adı Ek Girişi:
Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes (1995 : Strasbourg, France)
Elektronik Erişim:
ScienceDirect http://www.sciencedirect.com/science/book/9780444824134
Ayırtma:
Kopya:

Rafta:*

Kütüphane
Materyal Türü
Demirbaş Numarası
Yer Numarası
Durumu/İade Tarihi
Materyal Ayırtma
Arıyor...
 E-Kitap 256212-1001 ONLINE
Arıyor...

On Order